High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V
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DOI: 10.35848/1882-0786/abd599
Abstract: We report a recessed-gate enhancement-mode Al2O3-ZrO2/Al0.6Ga0.4N/Al0.4Ga0.6N metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET) with drain current as high as 0.48 A mm−1 at a gate-source voltage of +12 V. This was enabled by a pseudomorphic HFET structure… read more here.
Keywords: voltage; mode; recessed gate; enhancement mode ... See more keywords