Nanowatt use 8 V switching nonvolatile memory transistors with 2D MoTe2 channel and ferroelectric P(VDF-TrFE)
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DOI: 10.1016/j.nanoen.2020.105686
Abstract: Abstract Two dimensional (2D) p-MoTe2 channel-based nonvolatile memory transistors with ferroelectric P(VDF-TrFE) polymer has been studied using a bottom-gate device architecture, which is introduced to dramatically reduce both of the switching and drain voltages to… read more here.
Keywords: nonvolatile memory; memory transistors; vdf trfe; mote2 channel ... See more keywords