Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping.
Sign Up to like & getrecommendations! Published in 2018 at "Advanced materials"
DOI: 10.1002/adma.201706995
Abstract: Precisely controllable and reversible p/n-type electronic doping of molybdenum ditelluride (MoTe2 ) transistors is achieved by electrothermal doping (E-doping) processes. E-doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results… read more here.
Keywords: precisely controllable; doping mote2; electrothermal doping; mote2 transistors ... See more keywords
High‐Performance Large‐Scale Vertical 1T'/2H Homojunction CVD‐Grown Polycrystalline MoTe2 Transistors
Sign Up to like & getrecommendations! Published in 2021 at "Advanced Materials Interfaces"
DOI: 10.1002/admi.202002023
Abstract: 2D transition metal dichalcogenides (TMDs) have emerged as an ideal alternative to silicon in advanced electronics. Especially, MoTe2 attracts peculiar attention since it offers a unique opportunity of resolving critical electrical contacts. Currently, although MoTe2‐based… read more here.
Keywords: high performance; mote2 transistors; mote2; large scale ... See more keywords