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Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.08.029
Abstract: Abstract In the modeling of the reaction-transport process in GaN MOVPE growth, the selections of kinetic parameters (activation energy Ea and pre-exponential factor A) for gas reactions are quite uncertain, which cause uncertainties in both…
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Keywords:
growth;
movpe growth;
modeling reaction;
kinetic parameters ... See more keywords
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Published in 2018 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.12.009
Abstract: Abstract We present a first study of films of the quaternary Bi2−xSbxTe3−ySey solid solutions on (0 0 0 1) sapphire substrates grown by atmospheric pressure MOVPE. Trimethylbismuth, trimethylantimony, diisopropylselenide and diethyltelluride were used as precursors. To passivate the…
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Keywords:
transport characterization;
movpe growth;
transport;
characterization films ... See more keywords
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Published in 2021 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2021.126237
Abstract: Abstract The metalorganic vapor phase epitaxial (MOVPE) growth of AlN films was performed on face-to-face annealed sputtered AlN templates (FFA Sp-AlN) having a nano-striped pattern with a period of 300 nm and depth of 120 nm. Then,…
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Keywords:
growth;
growth conditions;
aln;
aln templates ... See more keywords
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Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12050785
Abstract: The remote epitaxy of GaN epilayers on GaN/sapphire templates was studied by using different graphene interlayer types. Monolayer, bilayer, double-stack of monolayer, and triple-stack of monolayer graphenes were transferred onto GaN/sapphire templates using a wet…
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Keywords:
graphene;
microscopy;
growth gan;
gan sapphire ... See more keywords