Band engineering in epitaxial monolayer transition metal dichalcogenides alloy MoxW1−xSe2 thin films
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DOI: 10.1063/1.5144694
Abstract: The direct bandgap transition and spin–orbit-coupling-induced spin-splitting in monolayer transition metal dichalcogenides MX2 (M = Mo, W; X = S, Se, Te) show great application potential in high-efficient optoelectronic devices and valleytronics and, thus, have attracted enormous… read more here.
Keywords: monolayer transition; moxw1 xse2; transition; spin splitting ... See more keywords