The Optical Gain of a Si-Based Lattice-Matched Si0.15Ge0.621Sn0.229/Si0.637Ge0.018Sn0.345 MQW Laser
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Russian Laser Research"
DOI: 10.1007/s10946-017-9621-0
Abstract: We study the optical-gain characteristics of a Si-based MQW laser, in which the active region has 20 Si0.15Ge0.621Sn0.229 quantum wells separated by 20 Si0.637Ge0.018Sn0.345 barriers. We reach a maximum optical gain of 2300 cm−1 with… read more here.
Keywords: gain; 15ge0 621sn0; 621sn0 229; mqw laser ... See more keywords
MOVPE grown GaInAsP/GaInAsP SCH-MQW laser diode on directly-bonded InP/Si substrate
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.10.024
Abstract: Abstract We have successfully obtained a metalorganic vapor phase epitaxy (MOVPE) grown GaInAsP/GaInAsP separate confinement heterostructure structure multi-quantum well (SCH-MQW) laser diode (LD) on a directly InP/Si substrate. InP/Si substrate was prepared by the hydrophilic… read more here.
Keywords: sch mqw; movpe grown; inp substrate; mqw laser ... See more keywords