Study of Stark Effect in n-doped 1.55 μm InN0.92yP1−1.92yBiy/InP MQWs
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DOI: 10.1007/s11664-018-6368-5
Abstract: The effect of an applied electric field on electronic band structure and optical absorption properties of n-doped InN0.92yP1−1.92yBiy/InP multiple quantum wells (MQWs) was theoretically studied using a self-consistent calculation combined with the 16-band anti-crossing model.… read more here.
Keywords: 92ybiy inp; inn0 92yp1; doped inn0; mqws ... See more keywords
Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission
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DOI: 10.1063/1.5028257
Abstract: Significant enhancement in green emission by integrating a thin AlInN barrier layer, or interlayer (IL), in an InGaN/GaN multiple quantum well (MQW) is demonstrated. The MQWs investigated here contains 5 periods of an InGaN QW,… read more here.
Keywords: gan multiple; multiple quantum; ingan gan; green emission ... See more keywords
High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier*
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DOI: 10.1088/1674-1056/26/1/017803
Abstract: A new approach to fabricating high-quality AlInGaN film as a lattice-matched barrier layer in multiple quantum wells (MQWs) is presented. The high-quality AlInGaN film is realized by growing the AlGaN/InGaN short period superlattices through metalorganic… read more here.
Keywords: multiple quantum; ingan alingan; lattice matched; mqws ... See more keywords