Perspectives on field-free spin–orbit torque devices for memory and computing applications
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Applied Physics"
DOI: 10.1063/5.0135185
Abstract: The emergence of embedded magnetic random-access memory (MRAM) and its integration in mainstream semiconductor manufacturing technology have created an unprecedented opportunity for engineering computing systems with improved performance, energy efficiency, lower cost, and unconventional computing… read more here.
Keywords: orbit torque; mram; spin orbit; memory ... See more keywords
Proactively Invalidating Dead Blocks to Enable Fast Writes in STT-MRAM Caches
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Access"
DOI: 10.1109/access.2022.3158493
Abstract: Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a promising emerging memory technology for on-chip caches. It has a low read access time and low leakage power. Unfortunately, however, STT-MRAM suffers from its long write… read more here.
Keywords: fast writes; mram; enable fast; writes stt ... See more keywords
Reconfigurable and Dynamically Transformable In-Cache-MPUF System With True Randomness Based on the SOT-MRAM
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Circuits and Systems I: Regular Papers"
DOI: 10.1109/tcsi.2022.3168133
Abstract: In this paper, we present a reconfigurable Physically Unclonable Functions (PUF) based on the Spin-Orbit-Torque Magnetic Random-Access Memory (SOT-MRAM), which exploits thermal noise as the true dynamic entropy source. Therefore, the MRAM cells could be… read more here.
Keywords: randomness; mram; cache mpuf; sot mram ... See more keywords
Analysis of the Switching Characteristics of MRAM Cells Based on Materials with Uniaxial Anisotropy
Sign Up to like & getrecommendations! Published in 2018 at "Semiconductors"
DOI: 10.1134/s1063782618150162
Abstract: Magnetoresistive random access memory (MRAM) has some advantages over other types of memory. However, MRAM has one substantial drawback: the current density and magnetic field that must be applied to switch the spin-valve free layer… read more here.
Keywords: spin valve; mram; switching characteristics; analysis switching ... See more keywords
Finite Element Approach for the Simulation of Modern MRAM Devices
Sign Up to like & getrecommendations! Published in 2023 at "Micromachines"
DOI: 10.3390/mi14050898
Abstract: Because of their nonvolatile nature and simple structure, the interest in MRAM devices has been steadily growing in recent years. Reliable simulation tools, capable of handling complex geometries composed of multiple materials, provide valuable help… read more here.
Keywords: mram; element approach; mram devices; finite element ... See more keywords