Proposal of Analog In-Memory Computing With Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Circuits and Systems I: Regular Papers"
DOI: 10.1109/tcsi.2022.3140769
Abstract: In-memory computing (IMC) is an effective solution for energy-efficient artificial intelligence applications. Analog IMC amortizes the power consumption of multiple sensing amplifiers with an analog-to-digital converter (ADC) and simultaneously completes the calculation of multi-line data… read more here.
Keywords: memory computing; stt mram; memory; ratio ... See more keywords
Analysis of the Switching Characteristics of MRAM Cells Based on Materials with Uniaxial Anisotropy
Sign Up to like & getrecommendations! Published in 2018 at "Semiconductors"
DOI: 10.1134/s1063782618150162
Abstract: Magnetoresistive random access memory (MRAM) has some advantages over other types of memory. However, MRAM has one substantial drawback: the current density and magnetic field that must be applied to switch the spin-valve free layer… read more here.
Keywords: spin valve; mram; switching characteristics; analysis switching ... See more keywords