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Published in 2019 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-019-02139-6
Abstract: mSmFeO3–Bi4Ti3O12 (m = 0.5, 1.0, 1.5, 2.0) thin films were prepared on silicon wafer by sol–gel progress. Their structure, leakage current density, ferroelectricity, magnetism, and dielectric property were investigated. All the samples have a single-phase Aurivillius structure.…
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Keywords:
thin films;
msmfeo3 bi4ti3o12;
smfeo3 content;
multiferroic properties ... See more keywords