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Published in 2018 at "IEEE Magnetics Letters"
DOI: 10.1109/lmag.2018.2829111
Abstract: We propose a multibit-per-cell architecture for spin-orbit torque magnetic random access memory (MBC SOT-MRAM) for high-density memory applications. By employing two diode-based magnetic tunnel junctions with a shared common heavy metal electrode, our architecture requires…
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Keywords:
area;
per cell;
multibit per;
access ... See more keywords