On the Multifinger Turn-On Instability in Drain Extended Vertically Stacked Nanosheet FETs Under ESD Stress Conditions
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DOI: 10.1109/ted.2023.3347708
Abstract: In this work, a multifinger drain extended (DE) nanosheet FET, designed on the lines of conventional drain extended MOS (DeMOS) devices, has been studied for its multifinger turn-on uniformity under electrostatic discharge (ESD) stress conditions… read more here.
Keywords: esd stress; turn instability; drain extended; multifinger turn ... See more keywords