Multilayer α′-4H-borophene growth on gallium arsenide towards high-performance near-infrared photodetector
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DOI: 10.1088/1361-6528/acba1e
Abstract: Multilayer borophene was predicted to have a similar semiconductor property to its monolayer arise from the weak van der Waals interactions between the layers. Besides, multilayer borophene has a higher carrier mobility than monolayer ones,… read more here.
Keywords: borophene; infrared photodetector; near infrared; multilayer borophene ... See more keywords