3-D multilayer monolithic integration of vertical-oriented double-heterojunction GaAs based pHEMT and thermal influence on device parameters
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DOI: 10.1016/j.sse.2017.03.001
Abstract: Abstract This study focuses on 3-D multilayer monolithic integration of vertical-oriented double-heterojunction AlGaAs/InGaAs/GaAs based pseudomorphic high electron mobility transistors. The effects of the presence of 3-D components above the active layer were accomplished by comparing… read more here.
Keywords: state; multilayer monolithic; monolithic integration; vertical oriented ... See more keywords