Possible charge-density-wave signatures in the anomalous resistivity of Li-intercalated multilayer MoS2
Sign Up to like & getrecommendations! Published in 2018 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2018.05.232
Abstract: Abstract We fabricate ion-gated field-effect transistors (iFET) on mechanically exfoliated multilayer MoS2. We encapsulate the flake by Al2O3, leaving the device channel exposed at the edges only. A stable Li+ intercalation in the MoS2 lattice… read more here.
Keywords: resistivity; density wave; charge density; mos2 ... See more keywords
Electrostatically Controllable Channel Thickness and Tunable Low-Frequency Noise Characteristics of Double-Gated Multilayer MoS2 Field-Effect Transistors with h-BN Dielectric.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c05294
Abstract: Two-dimensional transition-metal dichalcogenide (TMD) materials have attracted increasing attention in efforts to overcome fundamental issues faced by the complementary metal-oxide-semiconductor industry. Multilayer TMD materials such as MoS2 can be used for high-performance transistor-based applications; the… read more here.
Keywords: multilayer; low frequency; mos2; double gated ... See more keywords
High photoresponsivity from multilayer MoS2/Si heterojunction diodes formed by vertically stacking
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4994740
Abstract: We investigated a vertically stacked p+-n heterojunction diode consisting of a two-dimensional (2D) molybdenum disulfide (MoS2) crystal and a heavily doped p+-type Si substrate. The MoS2 flakes are transferred onto p+-Si substrates by using a… read more here.
Keywords: high photoresponsivity; mos2; photoresponsivity multilayer; heterojunction ... See more keywords
Long-term stability of multilayer MoS2 transistors with mica gate dielectric.
Sign Up to like & getrecommendations! Published in 2020 at "Nanotechnology"
DOI: 10.1088/1361-6528/ab6ab2
Abstract: To avoid surface damage of MoS2 channel, mica flake with high permittivity and atomically flat surface was dry transferred onto a multilayer MoS2 flake to prepare top-gated transistors. For the first time, the interface properties… read more here.
Keywords: long term; mos2; mos2 transistors; stability ... See more keywords