High-performance multilayer WSe2 field-effect transistors with carrier type control
Sign Up to like & getrecommendations! Published in 2017 at "Nano Research"
DOI: 10.1007/s12274-017-1681-5
Abstract: In this study, high-performance multilayer WSe2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe2 FET devices with… read more here.
Keywords: carrier type; type control; multilayer wse2; carrier ... See more keywords
The Auger process in multilayer WSe2 crystals.
Sign Up to like & getrecommendations! Published in 2018 at "Nanoscale"
DOI: 10.1039/c8nr02567c
Abstract: Multilayer WSe2 with a larger optical density of states and absorbance is regarded as a better candidate than its monolayer counterpart for next generation optoelectronic devices, however insight into carrier dynamics is still lacking. Herein,… read more here.
Keywords: process multilayer; multilayer wse2; auger process; multilayer ... See more keywords
Gate-tunable and high optoelectronic performance in multilayer WSe2 P–N diode
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Materials Chemistry C"
DOI: 10.1039/c8tc04295k
Abstract: Two-dimensional (2D) material-based P–N junctions are unique building blocks for next-generation optoelectronics with the advantages of atomic thinness, flexibility and low cost. However, their device performances are limited due to either weak photo-absorption or low-quality… read more here.
Keywords: multilayer wse2; tunable high; high optoelectronic; optoelectronic performance ... See more keywords