Investigation of the multilevel capability of TiN/Ti/HfO2/W resistive switching devices by sweep and pulse programming
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DOI: 10.1016/j.mee.2017.11.007
Abstract: Abstract Multilevel states are clearly distinguished in TiN/Ti/HfO2/W RRAM devices by programming sequential voltage ramps and trains of pulses. It has been shown that the filamentary conductance has a continuous dependence on the current compliance… read more here.
Keywords: multilevel capability; investigation multilevel; tin hfo2; multilevel ... See more keywords