Reliable multilevel memristive neuromorphic devices based on amorphous matrix via quasi-1D filament confinement and buffer layer
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DOI: 10.1126/sciadv.abj7866
Abstract: Conductive-bridging random access memory (CBRAM) has garnered attention as a building block of non–von Neumann architectures because of scalability and parallel processing on the crossbar array. To integrate CBRAM into the back-end-of-line (BEOL) process, amorphous… read more here.
Keywords: neuromorphic devices; layer; multilevel memristive; based amorphous ... See more keywords