Epitaxial La0.5Sr0.5MnO3‐δ Bipolar Memristive Devices with Tunable and Stable Multilevel States
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DOI: 10.1002/admi.202202496
Abstract: Valence change memories are novel data storage devices in which the resistance is determined by a reversible redox reaction triggered by voltage. The oxygen content and mobility within the active materials of these devices play… read more here.
Keywords: multilevel states; 5sr0 5mno3; memristive devices; la0 5sr0 ... See more keywords