Total ionizing dose effects in multiple-gate field-effect transistor
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DOI: 10.1088/1361-6641/aa6c02
Abstract: This paper focuses on total ionizing dose (TID) effects induced in multiple-gate field-effect transistors. The impact of device architecture, geometry and scaling on the TID response of multiple-gate transistors is reviewed in both bulk and… read more here.
Keywords: gate field; multiple gate; total ionizing; ionizing dose ... See more keywords