Total ionizing dose effects in multiple-gate field-effect transistor
Sign Up to like & getrecommendations! Published in 2017 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aa6c02
Abstract: This paper focuses on total ionizing dose (TID) effects induced in multiple-gate field-effect transistors. The impact of device architecture, geometry and scaling on the TID response of multiple-gate transistors is reviewed in both bulk and… read more here.
Keywords: gate field; multiple gate; total ionizing; ionizing dose ... See more keywords
Multiple-Gate FET Quantum Dot Behavior and a Proximity Charge Sensing Model
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2024.3393947
Abstract: Quantum dot (QD) formation in multiple-gate FETs is a promising solution to scale QD-based devices. In this work, we report on the superiority of the quantum mode performance of SOI-gate-all-around nanowire FETs (GAA NWFETs) compared… read more here.
Keywords: quantum dot; multiple gate; model; charge sensing ... See more keywords