Quantifying Implantation-Induced Damage and Point Defects with Multislice Electron Ptychography.
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DOI: 10.1021/acs.nanolett.5c00170
Abstract: Here, we use multislice electron ptychography to quantify damage introduced by ion implantation of Er into 4H-SiC. Comparing reconstructed volumes from experiment (each 2000 nm3) along the implantation direction, the crystal damage is quantified and… read more here.
Keywords: damage; implantation; implantation induced; multislice electron ... See more keywords