Investigation of Poly Silicon Channel Variation in Vertical 3D NAND Flash Memory
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Access"
DOI: 10.1109/access.2022.3212540
Abstract: Since the most of three dimensional (3D) NAND devices’ channel is composed of polysilicon grain, the actual 3D NAND channel has a wave-shaped channel, not uniform shape. In this study, we defined the curvature of… read more here.
Keywords: erase operation; program; nand; channel wave ... See more keywords
Grain Boundary Trap-Induced Current Transient in a 3-D NAND Flash Cell String
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2900736
Abstract: Transient cell current caused by the trapping/detrapping of grain boundary traps in the polycrystalline silicon (poly-Si) channel of a 3-D NAND cell string is comprehensively studied in this paper. This transient has a time constant… read more here.
Keywords: grain boundary; boundary trap; transient; nand ... See more keywords
Numerical Study on the Laser Annealing of Silicon Used in Advanced V-NAND Device
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15124201
Abstract: Laser melt annealing of amorphous silicon (a-Si) and subsequent recrystallization of a-Si are essential processes for successfully implementing vertical NAND (V-NAND) flash memory devices developed based on the cell-over-periphery (COP) structure. The aim of this… read more here.
Keywords: laser; temperature; nand; overlap ratio ... See more keywords