Enhanced Device Characteristics of Hybrid‐Channel (Poly‐Si/IGO) Structures with Ga2O3 and Al2O3 Interlayers by Suppressing Oxidation‐Induced Variability for Ultra‐High‐Density 3D NAND Flash Memory Applications
Sign Up to like & getrecommendations! Published in 2025 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202510062
Abstract: Hybrid‐channel (HC) structures integrating polycrystalline silicon (poly‐Si) and oxide semiconductors offer a promising path toward high‐mobility, thermally stable architectures for next‐generation 3D NAND flash memory. However, high‐temperature annealing required for oxide crystallization often induces interfacial… read more here.
Keywords: hybrid channel; memory; flash memory; nand flash ... See more keywords
Compact modeling of GIDL-assisted erase in 3-D NAND Flash strings
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-019-01328-0
Abstract: This paper presents a physics-based compact model able to describe the time dynamics of the erase operation in three-dimensional NAND Flash strings exploiting gate-induced drain leakage at the selector to increase the string potential. The… read more here.
Keywords: modeling gidl; flash strings; nand flash; compact modeling ... See more keywords
Modeling of program Vth distribution for 3-D TLC NAND flash memory
Sign Up to like & getrecommendations! Published in 2019 at "Science China Information Sciences"
DOI: 10.1007/s11432-018-9490-1
Abstract: This paper proposes a simulation method to model the program Vth distribution of 3-D vertical channel TLC/QLC charge-trapping NAND flash memory. The program Vth distribution can be calculated by considering ISPP noise, WL-WL interference, and… read more here.
Keywords: vth distribution; program vth; nand flash;
A drain leakage phenomenon in poly silicon channel 3D NAND flash caused by conductive paths along grain boundaries
Sign Up to like & getrecommendations! Published in 2018 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2018.02.009
Abstract: In this paper, a new drain leakage current phenomenon in the polycrystalline silicon channel three-dimensional (3D) NAND flash cell is discovered, which we have modeled as leakage paths along the grain boundaries. This drain leakage… read more here.
Keywords: phenomenon; drain leakage; leakage; paths along ... See more keywords
Reliability prediction model of NAND flash memory based on random forest algorithm
Sign Up to like & getrecommendations! Published in 2019 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.06.063
Abstract: Abstract Nowadays, NAND flash is widely used for its excellent characteristics. However, the increasing storage capability leads to the decrease of reliability of NAND flash. Therefore, improving the reliability of NAND flash chip has become… read more here.
Keywords: reliability; prediction; forest algorithm; nand flash ... See more keywords
A high-efficiency threshold voltage distribution test method based on the reliability of 3D NAND flash memory
Sign Up to like & getrecommendations! Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2020.113897
Abstract: Abstract With the improvement of manufacturing technology and the use of multi-level technology, the amount of charge stored in a flash memory cell decreases, the number of bits stored in each cell increases, the threshold… read more here.
Keywords: method based; threshold voltage; flash memory; nand flash ... See more keywords
Charge Trapping in Amorphous Dielectrics for Secure Charge Storage.
Sign Up to like & getrecommendations! Published in 2021 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.0c23083
Abstract: The fundamental scientific ingredient in the current information society is charge trapping in dielectric materials. The current data storage device known as NAND flash is based on charge trapping in silicon nitride, and it has… read more here.
Keywords: storage; secure charge; charge trapping; charge ... See more keywords
Concealable physical unclonable functions using vertical NAND flash memory
Sign Up to like & getrecommendations! Published in 2025 at "Nature Communications"
DOI: 10.1038/s41467-025-60415-y
Abstract: Physical Unclonable Functions (PUFs) can address the demand for enhanced hardware security. Vertical NAND (V-NAND) flash memory is the most commercialized non-volatile memory. However, it has been optimized to reduce cell-to-cell variation for stable data… read more here.
Keywords: memory; flash memory; nand flash; puf ... See more keywords
Modeling methodology for thermo-structural analysis of V-NAND flash memory structure
Sign Up to like & getrecommendations! Published in 2025 at "Scientific Reports"
DOI: 10.1038/s41598-025-89936-8
Abstract: This study proposes modeling methodology based on a continuous model for conducting thermo-electric-structural analyses of V-NAND flash memory structure under the Joule heating effect. The modeling methodology is based on a homogeneous method for investigating… read more here.
Keywords: methodology; structure; modeling methodology; flash memory ... See more keywords
Nanophotonic identification of defects buried in three-dimensional NAND flash memory devices
Sign Up to like & getrecommendations! Published in 2018 at "Nature Electronics"
DOI: 10.1038/s41928-017-0007-7
Abstract: Advances in nanophotonics and plasmonics have led to the creation of a variety of innovative optical components and devices. However, the development of powerful practical applications has so far been limited. Here we show that… read more here.
Keywords: three dimensional; dimensional nand; memory devices; flash memory ... See more keywords
Leveraging the page buffer data cache for enhanced programmability in NAND flash memories with on‐chip microcontrollers
Sign Up to like & getrecommendations! Published in 2024 at "Electronics Letters"
DOI: 10.1049/ell2.13111
Abstract: This paper proposes a simple yet effective scheme for NAND Flash memories that employ on‐chip microcontroller units (MCUs) to manage internal array operations. Through minimal hardware overhead, the proposed scheme enables—without mask revision— executing new… read more here.
Keywords: nand flash; flash memories; buffer data; chip ... See more keywords