Compact modeling of GIDL-assisted erase in 3-D NAND Flash strings
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-019-01328-0
Abstract: This paper presents a physics-based compact model able to describe the time dynamics of the erase operation in three-dimensional NAND Flash strings exploiting gate-induced drain leakage at the selector to increase the string potential. The… read more here.
Keywords: modeling gidl; flash strings; nand flash; compact modeling ... See more keywords
Modeling of program Vth distribution for 3-D TLC NAND flash memory
Sign Up to like & getrecommendations! Published in 2019 at "Science China Information Sciences"
DOI: 10.1007/s11432-018-9490-1
Abstract: This paper proposes a simulation method to model the program Vth distribution of 3-D vertical channel TLC/QLC charge-trapping NAND flash memory. The program Vth distribution can be calculated by considering ISPP noise, WL-WL interference, and… read more here.
Keywords: vth distribution; program vth; nand flash;
A drain leakage phenomenon in poly silicon channel 3D NAND flash caused by conductive paths along grain boundaries
Sign Up to like & getrecommendations! Published in 2018 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2018.02.009
Abstract: In this paper, a new drain leakage current phenomenon in the polycrystalline silicon channel three-dimensional (3D) NAND flash cell is discovered, which we have modeled as leakage paths along the grain boundaries. This drain leakage… read more here.
Keywords: phenomenon; drain leakage; leakage; paths along ... See more keywords
Reliability prediction model of NAND flash memory based on random forest algorithm
Sign Up to like & getrecommendations! Published in 2019 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.06.063
Abstract: Abstract Nowadays, NAND flash is widely used for its excellent characteristics. However, the increasing storage capability leads to the decrease of reliability of NAND flash. Therefore, improving the reliability of NAND flash chip has become… read more here.
Keywords: reliability; prediction; forest algorithm; nand flash ... See more keywords
A high-efficiency threshold voltage distribution test method based on the reliability of 3D NAND flash memory
Sign Up to like & getrecommendations! Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2020.113897
Abstract: Abstract With the improvement of manufacturing technology and the use of multi-level technology, the amount of charge stored in a flash memory cell decreases, the number of bits stored in each cell increases, the threshold… read more here.
Keywords: method based; threshold voltage; flash memory; nand flash ... See more keywords
Charge Trapping in Amorphous Dielectrics for Secure Charge Storage.
Sign Up to like & getrecommendations! Published in 2021 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.0c23083
Abstract: The fundamental scientific ingredient in the current information society is charge trapping in dielectric materials. The current data storage device known as NAND flash is based on charge trapping in silicon nitride, and it has… read more here.
Keywords: storage; secure charge; charge trapping; charge ... See more keywords
Nanophotonic identification of defects buried in three-dimensional NAND flash memory devices
Sign Up to like & getrecommendations! Published in 2018 at "Nature Electronics"
DOI: 10.1038/s41928-017-0007-7
Abstract: Advances in nanophotonics and plasmonics have led to the creation of a variety of innovative optical components and devices. However, the development of powerful practical applications has so far been limited. Here we show that… read more here.
Keywords: three dimensional; dimensional nand; memory devices; flash memory ... See more keywords
Influence of rapid thermal annealing on the wafer warpage in 3D NAND flash memory
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aafccd
Abstract: In this study, the wafer warpage resulting from common source line tungsten (CSL W) is investigated in 3D NAND flash memory. It is found that the warpage is related to the annealing conditions after CSL… read more here.
Keywords: flash memory; warpage; wafer warpage; nand flash ... See more keywords
CeSR + Assisted LDPC: A Holistic Strategy to Improve MLC NAND Flash Reliability
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Access"
DOI: 10.1109/access.2020.2985291
Abstract: NAND flash suffers from program interference and retention errors, which negatively affect its reliability. Existing schemes preprocess raw data before writing them to reduce Raw Bit Error Rate (RBER) and leverage ECCs (such as LDPC… read more here.
Keywords: cesr; assisted ldpc; strategy; nand flash ... See more keywords
A Preliminary Study: Towards Parallel Garbage Collection for NAND Flash-Based SSDs
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Access"
DOI: 10.1109/access.2020.3043123
Abstract: NAND Flash-based solid-state drives (SSDs) have been widely used as secondary storage devices due to their faster access speed, lower power consumption, and higher reliability compared with hard disk drives. However, application I/O performance can… read more here.
Keywords: garbage collection; flash; preliminary study; scheme ... See more keywords
Key Technology Practice of High-Speed Access and Research on the Temperature Dependence of Key Time Parameters Based on NAND Flash Memory
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Access"
DOI: 10.1109/access.2021.3052159
Abstract: This paper focuses on the NAND flash memory as a data storage medium in the Internet of things data acquisition system, which plays an important role from beginning to end. The flow process of multi-channel… read more here.
Keywords: flash memory; key time; time parameters; nand flash ... See more keywords