Oxide regrowth mechanism during silicon nitride etching in vertical 3D NAND structures
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DOI: 10.1016/j.mee.2019.111191
Abstract: Abstract It is essential to selectively etch Si3N4 in the presence of SiO2 during the process of fabricating vertical 3D NAND structures. SiO2 etching inhibitors can be added to H3PO4 to increase Si3N4-to-SiO2 etch selectivity;… read more here.
Keywords: vertical nand; regrowth; sio2 etch; nand structures ... See more keywords