Influence of gamma ray radiation on two-dimensional sub-threshold current of strained Si nano NMOSFET
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DOI: 10.1080/10420150.2019.1669036
Abstract: ABSTRACT The carrier transport in uniaxial strained Si N channel metalvn oxide semiconductor field effect transistor (NMOSFET) irradiated by gamma rays is analyzed. Based on the total dose irradiation effect, an analytical model of two-dimensional… read more here.
Keywords: sub threshold; nano nmosfet; strained nano; dimensional sub ... See more keywords