Investigating the Electromechanical Behavior of Unconventionally Ferroelectric Hf 0.5 Zr 0.5 O 2 ‐Based Capacitors Through Operando Nanobeam X‐Ray Diffraction
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DOI: 10.1002/aelm.202201298
Abstract: Understanding various aspects of ferroelectricity in hafnia-based nanomaterials is of vital importance for the development of future non-volatile memory and logic devices. Here, the unconventional and weak electromechanical response of epitaxial $La_{0.67}Sr_{0.33}MnO_{3}$/$Hf_{0.5}Zr_{0.5}O_{2}$/$La_{0.67}Sr_{0.33}MnO_{3}$ ferroelectric capacitors is… read more here.
Keywords: nanobeam ray; investigating electromechanical; ray diffraction; electromechanical behavior ... See more keywords
Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction
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DOI: 10.1063/5.0199961
Abstract: Position-dependent three-dimensional reciprocal space mapping (RSM) by nanobeam x-ray diffraction (nanoXRD) was performed to reveal the strain fields produced around individual threading dislocations (TDs) in GaN substrates. The distribution and Burgers vector of TDs for… read more here.
Keywords: nanobeam ray; analysis; around individual; strain fields ... See more keywords