Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation
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DOI: 10.3390/nano8060397
Abstract: We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE) a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their Schottky… read more here.
Keywords: schottky diodes; plane gan; hvpe plane; nanodot formation ... See more keywords