Effects of nanoepitaxial lateral overgrowth on growth of α-Ga2O3 by halide vapor phase epitaxy
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DOI: 10.1063/1.5100246
Abstract: We demonstrate that Pd nanoparticle/single-walled carbon nanotubes (Pd-SWCNTs) can be used to improve the quality of α-Ga2O3 crystals using halide vapor phase epitaxy (HVPE) methods. We employed Pd-SWCNTs as the nanoepitaxial lateral overgrowth (ELOG) mask… read more here.
Keywords: halide vapor; nanoepitaxial lateral; vapor phase; lateral overgrowth ... See more keywords