Sign Up to like & get
recommendations!
0
Published in 2019 at "Nanotechnology"
DOI: 10.1088/1361-6528/ab13d0
Abstract: Gallium nitride (GaN) all-around (wrap) gate vertical nanowire (V-NW) field-effect transistors (FETs) are favorable for enhanced electrostatic control of the gate and selectivity for normally on/off operation. In this work, GaN V-NW FETs with a…
read more here.
Keywords:
normally gan;
nanofabrication normally;
gan vertical;
nanowire ... See more keywords