Bright red electroluminescence from Al2O3/Eu2O3 nanolaminate films fabricated by atomic layer deposition on silicon
Sign Up to like & getrecommendations! Published in 2021 at "Scripta Materialia"
DOI: 10.1016/j.scriptamat.2021.113750
Abstract: Abstract Silicon-based metal-oxide-semiconductor light-emitting devices (MOSLEDs) based on the Al2O3/Eu2O3 nanolaminate films are fabricated by atomic layer deposition, which emit red electroluminescence (EL) peaking at 613 nm with the external quantum efficiency of 5.47% and power… read more here.
Keywords: nanolaminate films; al2o3 eu2o3; atomic layer; eu2o3 nanolaminate ... See more keywords
Intense electroluminescence from Al2O3/Tb2O3 nanolaminate films fabricated by atomic layer deposition on silicon.
Sign Up to like & getrecommendations! Published in 2018 at "Optics express"
DOI: 10.1364/oe.26.009344
Abstract: Intense electroluminescence (EL) from Tb3+ ions in the Al2O3/Tb2O3 nanolaminate films is achieved in a metal-oxide-semiconductor structure fabricated on silicon, utilizing atomic layer deposition. Precisely controlling of the nanolaminates enables the study on the influence… read more here.
Keywords: al2o3 tb2o3; layer; tb2o3 nanolaminate; atomic layer ... See more keywords