Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si x N y
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DOI: 10.1088/1361-6528/acc3a2
Abstract: Nanoporous GaN layers were fabricated using selective area sublimation through a self-organized AlN nanomask in a molecular beam epitaxy reactor. The obtained pore morphology, density and size were measured using plan-view and cross-section scanning electron… read more here.
Keywords: sublimation; nanomask; area sublimation; nanoporous gan ... See more keywords