β-Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications
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DOI: 10.1021/acsomega.7b01289
Abstract: Steep-slope β-Ga2O3 nanomembrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in the gate dielectric stack. Subthreshold slope less than 60 mV/dec at room temperature is obtained for both forward and… read more here.
Keywords: slope; ga2o3 nanomembrane; negative capacitance; nanomembrane negative ... See more keywords