Controllable fabrication of lateral periodic nanoporous GaN and its enhanced photocatalytic water splitting performance
Sign Up to like & getrecommendations! Published in 2020 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2020.146618
Abstract: Abstract Gallium nitride (GaN) is considered as one of the most promising candidates for water splitting due to its wide band gap and good chemical stability. Here, we fabricate different kinds of lateral periodic, well-ordered… read more here.
Keywords: water splitting; periodic nanoporous; gan enhanced; lateral periodic ... See more keywords
Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films as an example
Sign Up to like & getrecommendations! Published in 2022 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2021.162069
Abstract: Abstract To improve the efficiency of light extraction, the vertical-oriented nanoporous (NP) GaN film as scattering medium as well as light-coupling component was prepared by electrochemical (EC) etching followed by annealing process. The Lu2O3:Eu film… read more here.
Keywords: lu2o3; gan substrates; gan; substrates photonic ... See more keywords
Fabrication, annealing, and regrowth of wafer-scale nanoporous GaN distributed Bragg reflectors
Sign Up to like & getrecommendations! Published in 2018 at "Scripta Materialia"
DOI: 10.1016/j.scriptamat.2018.06.040
Abstract: Abstract A wafer-scale distributed Bragg reflector (DBR), which consists of perfectly lattice-matched polar (0001) GaN and nanoporous GaN layers, was fabricated by electrochemical etching method in an oxalic acid solution, presenting high-reflectivity (>90%) and wide… read more here.
Keywords: distributed bragg; fabrication annealing; nanoporous gan; wafer scale ... See more keywords
Enhanced optical output in InGaN/GaN light-emitting diodes by tailored refractive index of nanoporous GaN.
Sign Up to like & getrecommendations! Published in 2019 at "Nanotechnology"
DOI: 10.1088/1361-6528/ab31d0
Abstract: The light to be trapped inside light-emitting diodes (LEDs) greatly affects the luminous efficiency and device lifetime. Abrupt difference in refractive index between the sapphire substrate and GaN-based LEDs causes the light trapping by total… read more here.
Keywords: gan layer; emitting diodes; light emitting; nanoporous gan ... See more keywords
Performance improvement of UVA MQWs by vertical oriented nanoporous GaN underlayer.
Sign Up to like & getrecommendations! Published in 2020 at "Nanotechnology"
DOI: 10.1088/1361-6528/aba6b0
Abstract: Well-aligned lateral oriented and vertical oriented nanoporous GaN were fabricated by electrochemical etching procedure, and its influence on the optical characteristics of ultraviolet-A multiple quantum well structure was investigated. We used a multiple quantum well… read more here.
Keywords: oriented nanoporous; multiple quantum; well structure; vertical oriented ... See more keywords
Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si x N y
Sign Up to like & getrecommendations! Published in 2023 at "Nanotechnology"
DOI: 10.1088/1361-6528/acc3a2
Abstract: Nanoporous GaN layers were fabricated using selective area sublimation through a self-organized AlN nanomask in a molecular beam epitaxy reactor. The obtained pore morphology, density and size were measured using plan-view and cross-section scanning electron… read more here.
Keywords: sublimation; nanomask; area sublimation; nanoporous gan ... See more keywords
InGaN/GaN microdisks enabled by nanoporous GaN cladding.
Sign Up to like & getrecommendations! Published in 2018 at "Optics letters"
DOI: 10.1364/ol.43.005567
Abstract: The fabrication of nanoporous (NP) GaN is proposed as a generic technique to create out-of-plane index guiding for nitride microcavities. Compared to the conventional undercut technique, the proposed technique forms uniformly a low-index NP-GaN layer… read more here.
Keywords: technique; ingan gan; undercut technique; microdisks enabled ... See more keywords