Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates
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DOI: 10.3390/nano10030508
Abstract: We study the effect of thermal annealing on the electrical properties of the nanoscale p-n heterojunctions based on single n-type ZnO nanorods on p-type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition… read more here.
Keywords: nanorods gan; ion beam; gan substrates; zno ... See more keywords