Study of Nanoscale Profiling Modes of GaAs Epitaxial Structures by Focused Ion Beams
Sign Up to like & getrecommendations! Published in 2018 at "Nanotechnologies in Russia"
DOI: 10.1134/s199507801801007x
Abstract: The nanoscale profiling modes of epitaxial GaAs layers are experimentally studied through focused ion beams (FIB). The regularities of the influence of ion current and single FIB exposure time on the geometric characteristics of the… read more here.
Keywords: ion beams; gaas epitaxial; nanoscale profiling; ion ... See more keywords