Nanoscale Welding and Strain‐Engineered Photoluminescence of GaN Nanowires
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DOI: 10.1002/adom.202501821
Abstract: Strain engineering is a powerful tool for the development of nanostructured semiconductor devices. In this work, the effect of high external elastic strain is investigated on the photoluminescence of GaN nanowires (NWs). Individual horizontal NWs… read more here.
Keywords: gan nanowires; nanoscale welding; photoluminescence; strain ... See more keywords