Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure
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DOI: 10.1038/s41598-024-57290-w
Abstract: In this study, we demonstrate binary and ternary logic-in-memory (LIM) operations of inverters and NAND and NOR gates comprising nanosheet (NS) feedback field-effect transistors (FBFETs) with a triple-gated structure. The NS FBFETs are reconfigured in… read more here.
Keywords: logic memory; ternary logic; binary ternary; nanosheet feedback ... See more keywords