Self-Heating Induced Interchannel Vt Difference of Vertically Stacked Si Nanosheet Gate-All-Around MOSFETs
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DOI: 10.1109/led.2019.2945474
Abstract: The natural asymmetry of the vertically stacked channels results in the junction temperature difference in nanosheet channels which is dependent on pitch, nanosheet width, channel number, and input power. The Vt difference induced by the… read more here.
Keywords: induced interchannel; heating induced; self heating; vertically stacked ... See more keywords