Observation of nonvolatile resistive switching behaviors in 2D layered InSe nanosheets through controllable oxidation
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0061792
Abstract: Scientists have been seeking for suitable materials with nonvolatile resistive switching (RS) performance for memristive applications. Recently, nonvolatile RS behaviors have been achieved in an increasing number of two-dimensional (2D) materials. However, 2D InSe layers… read more here.
Keywords: oxidation; nonvolatile resistive; nanosheets controllable; inse nanosheets ... See more keywords
Cu x S nanosheets with controllable morphology and alignment for memristor devices
Sign Up to like & getrecommendations! Published in 2022 at "Nanotechnology"
DOI: 10.1088/1361-6528/ac5ca4
Abstract: In electrochemical metallization memristor, the performance of resistive switching (RS) is influenced by the forming and fusing of conductive filaments within the dielectric layer. However, the growth of filaments, mostly, is unpredictable and uncontrollable. For… read more here.
Keywords: controllable morphology; nanosheets controllable; morphology alignment; dielectric layer ... See more keywords