Enhancing deep-UV emission at 234 nm by introducing a truncated pyramid AlN/GaN nanostructure with fine-tuned multiple facets.
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DOI: 10.1039/d1nr06188g
Abstract: The external quantum efficiency of a high-Al content (>0.6) AlGaN deep-ultraviolet (DUV) light-emitting diode is typically below 1% in the sub-250 nm wavelength range. One of the main reasons for this low efficiency is the… read more here.
Keywords: nanostructure fine; truncated pyramid; aln gan; fine tuned ... See more keywords