Atomic Scale Dynamics of Contact Formation in the Cross-Section of InGaAs Nanowire Channels.
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DOI: 10.1021/acs.nanolett.6b04713
Abstract: Alloyed and compound contacts between metal and semiconductor transistor channels enable self-aligned gate processes which play a significant role in transistor scaling. At nanoscale dimensions and for nanowire channels, prior experiments focused on reactions along… read more here.
Keywords: contact formation; cross; cross section; nanowire channels ... See more keywords