Operation characteristics of Poly-Si nanowire charge-trapping flash memory devices with SiGe and Ge buried channels
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DOI: 10.1016/j.vacuum.2016.12.042
Abstract: Abstract Operation characteristics of polycrystalline silicon (poly-Si) nanowire (NW) charge-trapping (CT) flash memory devices with a SiGe and a Ge buried channel are studied and compared in this work. The poly-Si NW devices with a… read more here.
Keywords: trapping flash; nanowire charge; poly nanowire; charge trapping ... See more keywords