ZnSe nanoribbon-Si nanowire crossed p-n nano-heterojunctions: Electrical characterizations and photovoltaic applications
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DOI: 10.1016/j.solmat.2017.10.030
Abstract: Abstract p-type ZnSe nanoribbon and n-type Si nanowire are used to prepare crossed p-n nano-heterojuncion through a two step of contact sliding transfer method. Obvious diode characteristics with a large rectification ratio of ~ 20… read more here.
Keywords: nano heterojunction; nanoribbon nanowire; crossed nano; znse nanoribbon ... See more keywords