Trap and 1/f-noise effects at the surface and core of GaN nanowire gate-all-around FET structure
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DOI: 10.1007/s12274-019-2292-0
Abstract: AbstractUsing capacitance, conductance and noise measurements, we investigate the trapping behavior at the surface and in the core of triangular-shaped one-dimensional (1D) array of GaN nanowire gate-all-around field effect transistor (GAA FET), fabricated via a… read more here.
Keywords: surface core; gan nanowire; noise; nanowire gate ... See more keywords