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Published in 2017 at "Nano Research"
DOI: 10.1007/s12274-016-1379-0
Abstract: The unit of y axis in Fig. 2 in the original version of this article was unfortunately wrongly written on page 2856, instead of m−2. (Figure Presented.).
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Keywords:
obtain pattern;
strategies obtain;
erratum strategies;
pattern fidelity ... See more keywords
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Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.11.113
Abstract: Abstract In this study, we analyzed the influence of indium supply on the growth dynamics of gold-catalyzed InGaAs nanowires by in situ synchrotron X-ray diffraction. A high In/Ga supply ratio results in strong size inhomogeneity…
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Keywords:
nanowire growth;
growth;
supply;
influence indium ... See more keywords
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Published in 2017 at "Nano letters"
DOI: 10.1021/acs.nanolett.6b03795
Abstract: Semiconductor nanowires are versatile building blocks for optoelectronic devices, in part because nanowires offer an increased freedom in material design due to relaxed constraints on lattice matching during the epitaxial growth. This enables the growth…
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Keywords:
dynamics strongly;
growth dynamics;
nanowire growth;
inxga1 nanowire ... See more keywords
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Published in 2018 at "Nano letters"
DOI: 10.1021/acs.nanolett.8b00853
Abstract: We study the role of gold droplets in the initial stage of nanowire growth via the vapor-liquid-solid method. Apart from serving as a collections center for growth species, the gold droplets carry an additional crucial…
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Keywords:
nanowire growth;
assisted substrate;
growth;
gold droplets ... See more keywords
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Published in 2019 at "Nature Communications"
DOI: 10.1038/s41467-019-12437-6
Abstract: Semiconductor nanowires offer the opportunity to incorporate novel structures and functionality into electronic and optoelectronic devices. A clear understanding of the nanowire growth mechanism is essential for well-controlled growth of structures with desired properties, but…
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Keywords:
nanowire growth;
composition;
spectroscopy;
catalyst ... See more keywords
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Published in 2020 at "CrystEngComm"
DOI: 10.1039/c9ce01926j
Abstract: We present Au catalyzed p-GaAs nanowire growth on n-GaN layers as a possible method to grow an arsenide on a nitride compound semiconductor by metal organic vapor phase epitaxy. The GaAs growth position, the nanowire…
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Keywords:
spatially controlled;
nanowire growth;
nanowire;
growth ... See more keywords
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Published in 2023 at "Nanoscale horizons"
DOI: 10.1039/d2nh00432a
Abstract: Lateral dimensions of III-V nanowires are known to affect the growth dynamics and crystal structure. Investigations into size effects have in the past relied on theoretical models and post growth observations, which only give a…
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Keywords:
time;
nanowire growth;
growth;
growth dynamics ... See more keywords
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Published in 2020 at "Nanotechnology"
DOI: 10.1088/1361-6528/ab76ef
Abstract: We report the results of a microscopic study of the nucleation and early growth stages of metal-catalyzed silicon nanowires in plasma-enhanced chemical vapor deposition. The nucleation of silicon nanowires is investigated as a function of…
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Keywords:
silicon nanowires;
microscopy;
nucleation;
nanowire growth ... See more keywords
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Published in 2023 at "Nanotechnology"
DOI: 10.1088/1361-6528/acd2e1
Abstract: To exploit the promising properties of semiconductor nanowires and ensure the uniformity required to achieve device integration, their position on the growth substrate must be controlled. This work demonstrates the direct patterning of a SiO2/Si…
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Keywords:
nanowire growth;
growth;
ion beam;
position ... See more keywords
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Published in 2021 at "Nanomaterials"
DOI: 10.3390/nano11092378
Abstract: We present a growth model that describes the nanowire length and radius versus time in the absence of evaporation or scattering of semiconductor atoms (group III atoms in the case of III-V NWs) from the…
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Keywords:
time;
nanowire length;
nanowire growth;
nanowire ... See more keywords