Nanofabrication of normally-off GaN vertical nanowire MESFETs.
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DOI: 10.1088/1361-6528/ab13d0
Abstract: Gallium nitride (GaN) all-around (wrap) gate vertical nanowire (V-NW) field-effect transistors (FETs) are favorable for enhanced electrostatic control of the gate and selectivity for normally on/off operation. In this work, GaN V-NW FETs with a… read more here.
Keywords: normally gan; nanofabrication normally; gan vertical; nanowire ... See more keywords