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Published in 2018 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2018.03.001
Abstract: Abstract GaN gate-all-around (GAA) vertical nanowire MOSFET (VNWMOSFET) with channel length of 300 nm and diameter of 120 nm, the narrowest GaN-based vertical nanowire transistor ever achieved from the top-down approach, was fabricated by utilizing anisotropic side-wall…
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Keywords:
voltage;
low voltage;
vnwmosfet;
nanowire mosfet ... See more keywords
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Published in 2019 at "Modern Physics Letters B"
DOI: 10.1142/s0217984919501446
Abstract: In this study, an [Formula: see text] nanowire metal oxide semiconductor field effect transistor (MOSFET) photosensor with zinc oxide (metallic ZnO), which act as a transparent optical window over channel has been investigated. The electrical…
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Keywords:
nanowire mosfet;
see text;
formula see;