Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2018.2807389
Abstract: In this letter, Gate-All-Around (GAA) nanowire (NW) p-MOSFETs with new approaches to fabricate totally isolated channels in replacement metal gate (RMG) are reported for the first time. Few reformed fin forming processes based on conventional… read more here.
Keywords: short channel; nanowire mosfets; process; gaa nanowire ... See more keywords
Normally Off Vertical 3-D GaN Nanowire MOSFETs With Inverted ${p}$ -GaN Channel
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2824985
Abstract: This paper reports on the normally off GaN vertical MOSFETs based on nanowires (NWs) with an inverted p-GaN channel and a wrap-around-gate structure for the first time. Both inductively coupled plasma dry reactive-ion etching and… read more here.
Keywords: gan channel; normally vertical; gan nanowire; nanowire mosfets ... See more keywords