Modelling doping design in nanowire tunnel-FETs based on group-IV semiconductors
Sign Up to like & getrecommendations! Published in 2017 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2016.10.048
Abstract: Abstract The tunnel field-effect transistor (TFET), which utilises the band-to-band tunnelling mechanism for current conduction, provides the ability to achieve extremely low subthreshold swing ( read more here.
Keywords: modelling doping; tunnel; nanowire tunnel; tunnel fets ... See more keywords
Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects
Sign Up to like & getrecommendations! Published in 2020 at "Nano Letters"
DOI: 10.1021/acs.nanolett.9b05356
Abstract: Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by using… read more here.
Keywords: effect; subthreshold swing; negative capacitance; nanowire tunnel ... See more keywords