Core-shell homojunction silicon vertical nanowire tunneling field-effect transistors
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DOI: 10.1038/srep41142
Abstract: We propose three-terminal core-shell (CS) silicon vertical nanowire tunneling field-effect transistors (TFETs), which can be fabricated by conventional CMOS technology. CS TFETs show lower subthreshold swing (SS) and higher on-state current than conventional TFETs through… read more here.
Keywords: silicon vertical; core shell; nanowire; tunneling field ... See more keywords